*POLYFET RF DEVICES
*05/3/99
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
*SQ742
* VG=4 IDQ=247.52 MA
*                 D  G  S
.SUBCKT  S1E2/PF 20 10 30
LGATE 10  11     1.81N
RGATE 11  12     1.28
CG    10  30     0.275P
CRSS  12  17     2.98P
CISS  12  14     79.2P
LS    14  30     0.18N
CS    14  30     0.07P
LD    17  20     0.61N
CD    20  30     0.01P
R_RC  16  17     924
C_RC  14  16     2.5P
MOS   13  12  14  14     S1E2MOS  L=1.1U W= 0.166 ;D G S B LEVEL1
JFET  17  14  13         S1E2JF		   ;D G S
DBODY 14  17             S1E2DB		   ;P N

.MODEL   S1E2MOS NMOS(VTO=3.5  KP=0.9E-5 LAMBDA=0.15 RD=0.25 RS=0.28)
.MODEL   S1E2JF  NJF (VTO=-6.8 BETA=0.1 LAMBDA=1)
.MODEL   S1E2DB  D   (CJO=164.0P  RS=0.25 VJ=1.0 M=0.4 BV= 125.0)
.ENDS
*$